GT60N321(Q)

Part NumberGT60N321(Q)

ManufacturerToshiba Semiconductor and Storage

DescriptionIGBT 1000V 60A 170W TO3P LH

DatasheetGT60N321

Package / CaseTO-3PL

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionIGBT 1000V 60A 170W Through Hole TO-3P(LH)

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GT60N321(Q) - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - IGBTs - Single

Datasheet

GT60N321

Standard Package

100

Manufacturer

Toshiba Semiconductor and Storage

Series

Packaging

Tube

Part Status

Obsolete

IGBT Type

Voltage - Collector Emitter Breakdown (Max)

1000V

Current - Collector (Ic) (Max)

60A

Current - Collector Pulsed (Icm)

120A

Vce(on) (Max) @ Vge, Ic

2.8V @ 15V, 60A

Power - Max

170W

Switching Energy

Input Type

Standard

Td (on/off) @ 25°C

330ns/700ns

Test Condition

Reverse Recovery Time (trr)

2.5µs

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-3PL

Supplier Device Package

TO-3P(LH)

Base Part Number

GT60

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