GSID600A120S4B1

Part NumberGSID600A120S4B1

ManufacturerGlobal Power Technologies Group

DescriptionSILICON IGBT MODULES

DatasheetGSID600A120S4B1 Preliminary

Package / CaseModule

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionIGBT Module Half Bridge 1200V 1130A 3060W Chassis Mount Module

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GSID600A120S4B1 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - IGBTs - Modules

Datasheet

GSID600A120S4B1 Preliminary

Standard Package

Manufacturer

Global Power Technologies Group

Series

Amp+™

Part Status

Active

IGBT Type

Configuration

Half Bridge

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

1130A

Power - Max

3060W

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 600A

Current - Collector Cutoff (Max)

1mA

Input Capacitance (Cies) @ Vce

51nF @ 25V

Input

Standard

NTC Thermistor

Yes

Operating Temperature

-40°C ~ 150°C

Mounting Type

Chassis Mount

Package / Case

Module

Supplier Device Package