GP1M016A060N

Part NumberGP1M016A060N

ManufacturerGlobal Power Technologies Group

DescriptionMOSFET N-CH 600V 16A TO3PN

DatasheetGP1M016A060N

Package / CaseTO-3P-3, SC-65-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 16A (Tc) 312W (Tc) Through Hole TO-3PN

To learn about the specification of GP1M016A060N, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add GP1M016A060N with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of GP1M016A060N.
We are offering GP1M016A060N for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

GP1M016A060N - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

GP1M016A060N

Standard Package

Manufacturer

Global Power Technologies Group

Series

Packaging

Tube

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

16A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

470mOhm @ 8A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

53nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

3039pF @ 25V

FET Feature

Power Dissipation (Max)

312W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3PN

Package / Case

TO-3P-3, SC-65-3

All categories

GP1M016A060N

Part NumberGP1M016A060N

ManufacturerGlobal Power Technologies Group

DescriptionMOSFET N-CH 600V 16A TO3PN

DatasheetGP1M016A060N

Package / CaseTO-3P-3, SC-65-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 16A (Tc) 312W (Tc) Through Hole TO-3PN

GP1M016A060N - Product Attributes

GP1M016A060N - Tags