GP1M010A080N

Part NumberGP1M010A080N

ManufacturerGlobal Power Technologies Group

DescriptionMOSFET N-CH 900V 10A TO3PN

DatasheetGP1M010A080N

Package / CaseTO-3P-3, SC-65-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 900V 10A (Tc) 312W (Tc) Through Hole TO-3PN

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GP1M010A080N - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

GP1M010A080N

Standard Package

1800

Manufacturer

Global Power Technologies Group

Series

Packaging

Tape & Reel (TR)

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

900V

Current - Continuous Drain (Id) @ 25°C

10A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.05Ohm @ 5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

53nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2336pF @ 25V

FET Feature

Power Dissipation (Max)

312W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3PN

Package / Case

TO-3P-3, SC-65-3

All categories

GP1M010A080N

Part NumberGP1M010A080N

ManufacturerGlobal Power Technologies Group

DescriptionMOSFET N-CH 900V 10A TO3PN

DatasheetGP1M010A080N

Package / CaseTO-3P-3, SC-65-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 900V 10A (Tc) 312W (Tc) Through Hole TO-3PN

GP1M010A080N - Product Attributes

GP1M010A080N - Tags