GP1M009A090N

Part NumberGP1M009A090N

ManufacturerGlobal Power Technologies Group

DescriptionMOSFET N-CH 900V 9.5A TO3PN

DatasheetGP1M009A090N

Package / CaseTO-3P-3, SC-65-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 900V 9.5A (Tc) 312W (Tc) Through Hole TO-3PN

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GP1M009A090N - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

GP1M009A090N

Standard Package

Manufacturer

Global Power Technologies Group

Series

Packaging

Tube

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

900V

Current - Continuous Drain (Id) @ 25°C

9.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.4Ohm @ 4.75A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

65nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2324pF @ 25V

FET Feature

Power Dissipation (Max)

312W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3PN

Package / Case

TO-3P-3, SC-65-3

All categories

GP1M009A090N

Part NumberGP1M009A090N

ManufacturerGlobal Power Technologies Group

DescriptionMOSFET N-CH 900V 9.5A TO3PN

DatasheetGP1M009A090N

Package / CaseTO-3P-3, SC-65-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 900V 9.5A (Tc) 312W (Tc) Through Hole TO-3PN

GP1M009A090N - Product Attributes

GP1M009A090N - Tags