GP1M008A050FG

Part NumberGP1M008A050FG

ManufacturerGlobal Power Technologies Group

DescriptionMOSFET N-CH 500V 8A TO220F

DatasheetGP1M008A050FG, HG

Package / CaseTO-220-3 Full Pack

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 500V 8A (Tc) 39W (Tc) Through Hole TO-220F

To learn about the specification of GP1M008A050FG, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add GP1M008A050FG with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of GP1M008A050FG.
We are offering GP1M008A050FG for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

GP1M008A050FG - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

GP1M008A050FG, HG

Standard Package

Manufacturer

Global Power Technologies Group

Series

Packaging

Tube

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

850mOhm @ 4A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

21nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

937pF @ 25V

FET Feature

Power Dissipation (Max)

39W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220F

Package / Case

TO-220-3 Full Pack

All categories