GP1M006A065F

Part NumberGP1M006A065F

ManufacturerGlobal Power Technologies Group

DescriptionMOSFET N-CH 650V 5.5A TO220F

DatasheetGP1M006A065(F)H

Package / CaseTO-220-3 Full Pack

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 5.5A (Tc) 39W (Tc) Through Hole TO-220F

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GP1M006A065F - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

GP1M006A065(F)H

Standard Package

2000

Manufacturer

Global Power Technologies Group

Series

Packaging

Tape & Reel (TR)

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

5.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.6Ohm @ 2.75A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

17nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1177pF @ 25V

FET Feature

Power Dissipation (Max)

39W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220F

Package / Case

TO-220-3 Full Pack

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