GP1M003A090C

Part NumberGP1M003A090C

ManufacturerGlobal Power Technologies Group

DescriptionMOSFET N-CH 900V 2.5A DPAK

DatasheetGP1M003A090C, PH

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 900V 2.5A (Tc) 94W (Tc) Surface Mount D-Pak

To learn about the specification of GP1M003A090C, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add GP1M003A090C with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of GP1M003A090C.
We are offering GP1M003A090C for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

GP1M003A090C - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

GP1M003A090C, PH

Standard Package

Manufacturer

Global Power Technologies Group

Series

Packaging

Cut Tape (CT)

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

900V

Current - Continuous Drain (Id) @ 25°C

2.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

5.1Ohm @ 1.25A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

17nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

748pF @ 25V

FET Feature

Power Dissipation (Max)

94W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

All categories