GB2X100MPS12-227

Part NumberGB2X100MPS12-227

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Categories	Discrete Semiconductor Products / Diodes - Rectifiers - Arrays
Datasheet	GB2X100MPS12-227
Standard Package	10
Manufacturer	GeneSiC Semiconductor
Series	-
Packaging	Tube
Part Status	Active
Diode Configuration	2 Independent
Diode Type	Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max)	1200V
Current - Average Rectified (Io) (per Diode)	185A (DC)
Voltage - Forward (Vf) (Max) @ If	1.8V @ 100A
Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0ns
Current - Reverse Leakage @ Vr	80µA @ 1200V
Operating Temperature - Junction	-55°C ~ 175°C
Mounting Type	Chassis Mount
Package / Case	SOT-227-4, miniBLOC
Supplier Device Package	SOT-227

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GHXS050A060S-D3	Global Power Technologies Group, Diode Array 2 Independent Silicon Carbide Schottky 600V 50A Chassis Mount SOT-227-4, miniBLOC,	View
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C4D40120D	Cree/Wolfspeed, Diode Array 1 Pair Common Cathode Silicon Carbide Schottky 1200V 27A Through Hole TO-247-3, Z-Rec®	View
GHXS060A120S-D3	Global Power Technologies Group, Diode Array 2 Independent Silicon Carbide Schottky 1200V 60A Chassis Mount SOT-227-4, miniBLOC,	View
C3D08065A	Cree/Wolfspeed, Diode Silicon Carbide Schottky 650V 24A (DC) Through Hole TO-220-2, Z-Rec®	View
LSIC2SD065C16A	Littelfuse Inc., Diode Silicon Carbide Schottky 650V 38A (DC) Surface Mount TO-252, (D-Pak), Gen2	View
LSIC2SD065C20A	Littelfuse Inc., Diode Silicon Carbide Schottky 650V 45A (DC) Surface Mount TO-252, (D-Pak), Gen2	View