GA20SICP12-247

Part NumberGA20SICP12-247

ManufacturerGeneSiC Semiconductor

DescriptionTRANS SJT 1200V 45A TO247

DatasheetGA20SICP12-247

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description1200V 45A (Tc) 282W (Tc) Through Hole TO-247AB

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GA20SICP12-247 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

GA20SICP12-247

Standard Package

Manufacturer

GeneSiC Semiconductor

Series

Packaging

Tube

Part Status

Obsolete

FET Type

Technology

SiC (Silicon Carbide Junction Transistor)

Drain to Source Voltage (Vdss)

1200V

Current - Continuous Drain (Id) @ 25°C

45A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

Rds On (Max) @ Id, Vgs

50mOhm @ 20A

Vgs(th) (Max) @ Id

Vgs (Max)

Input Capacitance (Ciss) (Max) @ Vds

3091pF @ 800V

FET Feature

Power Dissipation (Max)

282W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247AB

Package / Case

TO-247-3

All categories

GA20SICP12-247

Part NumberGA20SICP12-247

ManufacturerGeneSiC Semiconductor

DescriptionTRANS SJT 1200V 45A TO247

DatasheetGA20SICP12-247

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description1200V 45A (Tc) 282W (Tc) Through Hole TO-247AB

GA20SICP12-247 - Product Attributes

GA20SICP12-247 - Tags