FZ800R12KS4B2NOSA1


FZ800R12KS4B2NOSA1

Part NumberFZ800R12KS4B2NOSA1

Manufacturer

Description

Datasheet

Package / CaseModule

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

FZ800R12KS4B2NOSA1 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - IGBTs - Modules
Datasheet
Standard Package2
ManufacturerInfineon Technologies
Series-
Part StatusNot For New Designs
IGBT Type-
ConfigurationSingle
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)1200A
Power - Max7600W
Vce(on) (Max) @ Vge, Ic3.7V @ 15V, 800A
Current - Collector Cutoff (Max)5mA
Input Capacitance (Cies) @ Vce52nF @ 25V
InputStandard
NTC ThermistorNo
Operating Temperature-40°C ~ 125°C
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageModule

FZ800R12KS4B2NOSA1 - Tags

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