FQP8P10
FQP8P10
Part Number FQP8P10
Description MOSFET P-CH 100V 8A TO-220
Package / Case TO-220-3
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Lead Time To be Confirmed
Detailed Description P-Channel 100V 8A (Tc) 65W (Tc) Through Hole TO-220-3
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FQP8P10 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FQP8P10
Standard Package 1000
Manufacturer ON Semiconductor
Series QFET®
Packaging Tube
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 530mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 470pF @ 25V
FET Feature -
Power Dissipation (Max) 65W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
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