FQN1N60CTA
FQN1N60CTA
Part Number FQN1N60CTA
Description MOSFET N-CH 600V 300MA TO-92
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 600V 300mA (Tc) 1W (Ta), 3W (Tc) Through Hole TO-92-3
To learn about the specification of FQN1N60CTA, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add FQN1N60CTA with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of FQN1N60CTA.
We are offering FQN1N60CTA for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
FQN1N60CTA - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FQN1N60C
Standard Package 1
Manufacturer ON Semiconductor
Series QFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 300mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 11.5Ohm @ 150mA, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6.2nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 170pF @ 25V
FET Feature -
Power Dissipation (Max) 1W (Ta), 3W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-92-3
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
FQN1N60CTA - Related ProductsMore >>
BSS138-TP
Micro Commercial Co, N-Channel 50V 220mA 350mW Surface Mount SOT-23,
View
IPB64N25S320ATMA1
Infineon Technologies, N-Channel 250V 64A (Tc) 300W (Tc) Surface Mount PG-TO263-3-2, OptiMOS™
View
HUF75545S3ST
ON Semiconductor, N-Channel 80V 75A (Tc) 270W (Tc) Surface Mount D²PAK (TO-263AB), UltraFET™
View
SI4156DY-T1-GE3
Vishay Siliconix, N-Channel 30V 24A (Tc) 2.5W (Ta), 6W (Tc) Surface Mount 8-SO, TrenchFET®
View
PHP28NQ15T,127
Nexperia USA Inc., N-Channel 150V 28.5A (Tj) 150W (Tc) Through Hole TO-220AB, TrenchMOS™
View
BSO033N03MSGXUMA1
Infineon Technologies, N-Channel 30V 17A (Ta) 1.56W (Ta) Surface Mount PG-DSO-8, OptiMOS™
View
IRL540PBF
Vishay Siliconix, N-Channel 100V 28A (Tc) 150W (Tc) Through Hole TO-220AB,
View
IRF1405PBF
Infineon Technologies, N-Channel 55V 169A (Tc) 330W (Tc) Through Hole TO-220AB, HEXFET®
View
SI7370DP-T1-E3
Vishay Siliconix, N-Channel 60V 9.6A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®
View
FDD8870
ON Semiconductor, N-Channel 30V 21A (Ta), 160A (Tc) 160W (Tc) Surface Mount TO-252AA, PowerTrench®
View
TN2435N8-G
Microchip Technology, N-Channel 350V 365mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89),
View
STB42N65M5
STMicroelectronics, N-Channel 650V 33A (Tc) 190W (Tc) Surface Mount D2PAK, MDmesh™ V
View
FQN1N60CTA - Tags