FQD12P10TM-F085

Part NumberFQD12P10TM-F085

ManufacturerON Semiconductor

DescriptionMOSFET P-CH 100V 9.4A DPAK

DatasheetFQD12P10TM_F085

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 100V 9.4A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount TO-252, (D-Pak)

To learn about the specification of FQD12P10TM-F085, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add FQD12P10TM-F085 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of FQD12P10TM-F085.
We are offering FQD12P10TM-F085 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

FQD12P10TM-F085 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

FQD12P10TM_F085

Standard Package

Manufacturer

ON Semiconductor

Series

Automotive, AEC-Q101

Packaging

Cut Tape (CT)

Part Status

Discontinued at Digi-Key

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

9.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

290mOhm @ 4.7A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

27nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

800pF @ 25V

FET Feature

Power Dissipation (Max)

2.5W (Ta), 50W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252, (D-Pak)

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

All categories