FQB6N80TM
FQB6N80TM
Part Number FQB6N80TM
Description MOSFET N-CH 800V 5.8A D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 800V 5.8A (Tc) 3.13W (Ta), 158W (Tc) Surface Mount D²PAK (TO-263AB)
To learn about the specification of FQB6N80TM, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add FQB6N80TM with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of FQB6N80TM.
We are offering FQB6N80TM for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
FQB6N80TM - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FQB6N80
Standard Package 800
Manufacturer ON Semiconductor
Series QFET®
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800V
Current - Continuous Drain (Id) @ 25°C 5.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.95Ohm @ 2.9A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1500pF @ 25V
FET Feature -
Power Dissipation (Max) 3.13W (Ta), 158W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263AB)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FQB6N80TM - Related ProductsMore >>
DMT8012LK3-13
Diodes Incorporated, N-Channel 80V 44A (Tc) 2.7W (Ta) Surface Mount TO-252,
View
IPB60R360P7ATMA1
Infineon Technologies, N-Channel 600V 9A (Tc) 41W (Tc) Surface Mount D²PAK (TO-263AB), CoolMOS™ P7
View
SIJ494DP-T1-GE3
Vishay Siliconix, N-Channel 150V 36.8A (Tc) 69.4W (Tc) Surface Mount PowerPAK® SO-8, ThunderFET®
View
TK100A10N1,S4X
Toshiba Semiconductor and Storage, N-Channel 100V 100A (Tc) 45W (Tc) Through Hole TO-220SIS, U-MOSVIII-H
View
CSD17522Q5A
Texas Instruments, N-Channel 30V 87A (Tc) 3W (Ta) Surface Mount 8-VSONP (5x6), NexFET™
View
SPB21N50C3ATMA1
Infineon Technologies, N-Channel 560V 21A (Tc) 208W (Tc) Surface Mount PG-TO263-3-2, CoolMOS™
View
CSD17577Q3AT
Texas Instruments, N-Channel 30V 35A (Ta) 2.8W (Ta), 53W (Tc) Surface Mount 8-VSONP (3x3.15), NexFET™
View
CSD19532KTT
Texas Instruments, N-Channel 100V 200A (Ta) 250W (Tc) Surface Mount DDPAK/TO-263-3, NexFET™
View
IRFR3607TRPBF
Infineon Technologies, N-Channel 75V 56A (Tc) 140W (Tc) Surface Mount D-Pak, HEXFET®
View
IPD70R1K4CEAUMA1
Infineon Technologies, N-Channel 700V 5.4A (Tc) 53W (Tc) Surface Mount PG-TO252-3, CoolMOS™
View
AON6250
Alpha & Omega Semiconductor Inc., N-Channel 150V 13.5A (Ta), 52A (Tc) 7.4W (Ta), 104W (Tc) Surface Mount 8-DFN (5x6),
View
TPH2900ENH,L1Q
Toshiba Semiconductor and Storage, N-Channel 200V 33A (Ta) 78W (Tc) Surface Mount 8-SOP Advance (5x5), U-MOSVIII-H
View
FQB6N80TM - Tags