FQB33N10LTM
FQB33N10LTM
Part Number FQB33N10LTM Description MOSFET N-CH 100V 33A D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263ABUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 100V 33A (Tc) 3.75W (Ta), 127W (Tc) Surface Mount D²PAK (TO-263AB)
To learn about the specification of FQB33N10LTM, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add FQB33N10LTM with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of FQB33N10LTM.
We are offering FQB33N10LTM for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
FQB33N10LTM - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FQB33N10L Standard Package 1 Manufacturer ON Semiconductor Series QFET® Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 33A (Tc) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ Id, Vgs 52mOhm @ 16.5A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 40nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1630pF @ 25V FET Feature - Power Dissipation (Max) 3.75W (Ta), 127W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D²PAK (TO-263AB) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FQB33N10LTM - Related ProductsMore >>
CSD17585F5 Texas Instruments, N-Channel 30V 5.9A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR, FemtoFET™
View
IPT65R105G7XTMA1 Infineon Technologies, N-Channel 650V 24A (Tc) 156W (Tc) Surface Mount PG-HSOF-8-2, CoolMOS™ C7
View
STB24N60M2 STMicroelectronics, N-Channel 600V 18A (Tc) 150W (Tc) Surface Mount D2PAK, MDmesh™ II Plus
View
BSS119NH6327XTSA1 Infineon Technologies, N-Channel 100V 190mA (Ta) 500mW (Ta) Surface Mount SOT-23-3, OptiMOS™
View
TPH2R506PL,L1Q Toshiba Semiconductor and Storage, N-Channel 60V 100A (Tc) 132W (Tc) Surface Mount 8-SOP Advance (5x5), U-MOSIX-H
View
IRLML2060TRPBF Infineon Technologies, N-Channel 60V 1.2A (Ta) 1.25W (Ta) Surface Mount Micro3™/SOT-23, HEXFET®
View
RQ3E180BNTB Rohm Semiconductor, N-Channel 30V 39A (Tc) 2W (Ta), 20W (Tc) Surface Mount 8-HSMT (3.2x3),
View
FQPF9N25C ON Semiconductor, N-Channel 250V 8.8A (Tc) 38W (Tc) Through Hole TO-220F, QFET®
View
SI4368DY-T1-E3 Vishay Siliconix, N-Channel 30V 17A (Ta) 1.6W (Ta) Surface Mount 8-SO, TrenchFET®
View
IXTQ180N10T IXYS, N-Channel 100V 180A (Tc) 480W (Tc) Through Hole TO-3P, TrenchMV™
View
ZVN2106GTA Diodes Incorporated, N-Channel 60V 710mA (Ta) 2W (Ta) Surface Mount SOT-223,
View
IXTK60N50L2 IXYS, N-Channel 500V 60A (Tc) 960W (Tc) Through Hole TO-264 (IXTK), Linear L2™
View
FQB33N10LTM - Tags
English
