Categories	Discrete Semiconductor Products / Transistors - IGBTs - Single
Datasheet	FGH40T120SMD(F155)
Standard Package	450
Manufacturer	ON Semiconductor
Series	-
Packaging	Tube
Part Status	Active
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	80A
Current - Collector Pulsed (Icm)	160A
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 40A
Power - Max	555W
Switching Energy	2.7mJ (on), 1.1mJ (off)
Input Type	Standard
Gate Charge	370nC
Td (on/off) @ 25°C	40ns/475ns
Test Condition	600V, 40A, 10Ohm, 15V
Reverse Recovery Time (trr)	65ns
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247-3

IGW50N60TPXKSA1	Infineon Technologies, IGBT Trench Field Stop 600V 80A 319.2W Through Hole PG-TO247-3, TrenchStop™	View
IXBH16N170A	IXYS, IGBT 1700V 16A 150W Through Hole TO-247AD (IXBH), BIMOSFET™	View
STGB30V60F	STMicroelectronics, IGBT Trench Field Stop 600V 60A 260W Surface Mount D2PAK,	View
STGW30H60DFB	STMicroelectronics, IGBT Trench Field Stop 600V 60A 260W Through Hole TO-247,	View
IKZ75N65ES5XKSA1	Infineon Technologies, IGBT Trench 650V 80A 395W Through Hole PG-TO247-4, TrenchStop™ 5	View
IKW30N65WR5XKSA1	Infineon Technologies, IGBT Trench 650V 60A 185W Through Hole PG-TO247-3, TrenchStop™	View
FGH80N60FD2TU	ON Semiconductor, IGBT Field Stop 600V 80A 290W Through Hole TO-247-3,	View
IXXH80N65B4H1	IXYS, IGBT PT 650V 160A 625W Through Hole TO-247 (IXXH), GenX4™, XPT™	View
IXBF12N300	IXYS, IGBT 3000V 26A 125W Through Hole ISOPLUS i4-PAC™, BIMOSFET™	View
NGTG35N65FL2WG	ON Semiconductor, IGBT Field Stop 650V 70A 300W Through Hole TO-247-3,	View
STGWT40V60DF	STMicroelectronics, IGBT Trench Field Stop 600V 80A 283W Through Hole TO-3P,	View
IKP20N65H5XKSA1	Infineon Technologies, IGBT Trench 650V 42A 125W Through Hole PG-TO220-3, TrenchStop™	View

FGH40T120SMD

Part NumberFGH40T120SMD