Categories	Discrete Semiconductor Products / Transistors - IGBTs - Single
Datasheet	FGH40T120SMD(F155)
Standard Package	450
Manufacturer	ON Semiconductor
Series	-
Packaging	Tube
Part Status	Active
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	80A
Current - Collector Pulsed (Icm)	160A
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 40A
Power - Max	555W
Switching Energy	2.7mJ (on), 1.1mJ (off)
Input Type	Standard
Gate Charge	370nC
Td (on/off) @ 25°C	40ns/475ns
Test Condition	600V, 40A, 10Ohm, 15V
Reverse Recovery Time (trr)	65ns
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247-3

APT50GN120L2DQ2G	Microsemi Corporation, IGBT NPT, Trench Field Stop 1200V 134A 543W Through Hole,	View
HGTG10N120BND	ON Semiconductor, IGBT NPT 1200V 35A 298W Through Hole TO-247-3,	View
APT43GA90B	Microsemi Corporation, IGBT PT 900V 78A 337W Through Hole TO-247 [B], POWER MOS 8™	View
STGW60H60DLFB	STMicroelectronics, IGBT Trench Field Stop 600V 80A 375W Through Hole TO-247,	View
RGTV00TK65DGC11	Rohm Semiconductor, IGBT Trench Field Stop 650V 45A 94W Through Hole TO-3PFM,	View
FII40-06D	IXYS, IGBT Array NPT Half Bridge 600V 40A 125W Through Hole ISOPLUS i4-PAC™,	View
IRG4PH40UPBF	Infineon Technologies, IGBT 1200V 41A 160W Through Hole TO-247AC,	View
IKD10N60RATMA1	Infineon Technologies, IGBT Trench Field Stop 600V 20A 150W Surface Mount PG-TO252-3, TrenchStop™	View
IHW40N65R5XKSA1	Infineon Technologies, IGBT 650V 80A 230W Through Hole PG-TO247-3, TrenchStop®	View
APT25GP120BDQ1G	Microsemi Corporation, IGBT PT 1200V 69A 417W Through Hole TO-247 [B], POWER MOS 7®	View
IKA10N60TXKSA1	Infineon Technologies, IGBT Trench Field Stop 600V 11.7A 30W Through Hole PG-TO220-3, TrenchStop®	View
APT50GN120B2G	Microsemi Corporation, IGBT NPT, Trench Field Stop 1200V 134A 543W Through Hole,	View

FGH40T120SMD

Part NumberFGH40T120SMD