FF650R17IE4DPB2BOSA1

Part NumberFF650R17IE4DPB2BOSA1

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Categories	Discrete Semiconductor Products / Transistors - IGBTs - Modules
Datasheet	FF650R17IE4DP_B2
Standard Package	3
Manufacturer	Infineon Technologies
Series	-
Part Status	Active
IGBT Type	Trench Field Stop
Configuration	2 Independent
Voltage - Collector Emitter Breakdown (Max)	1700V
Current - Collector (Ic) (Max)	650A
Vce(on) (Max) @ Vge, Ic	2.45V @ 15V, 650A
Current - Collector Cutoff (Max)	5mA
Input Capacitance (Cies) @ Vce	54nF @ 25V
Input	Standard
NTC Thermistor	Yes
Operating Temperature	-40°C ~ 150°C
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	Module