FF200R12KT3EHOSA1


FF200R12KT3EHOSA1

Part NumberFF200R12KT3EHOSA1

Manufacturer

Description

Datasheet

Package / CaseModule

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

FF200R12KT3EHOSA1 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - IGBTs - Modules
Datasheet
Standard Package10
ManufacturerInfineon Technologies
Series-
Part StatusActive
IGBT Type-
Configuration2 Independent
Voltage - Collector Emitter Breakdown (Max)1200V
Power - Max1050W
Vce(on) (Max) @ Vge, Ic2.15V @ 15V, 200A
Current - Collector Cutoff (Max)5mA
Input Capacitance (Cies) @ Vce14nF @ 25V
InputStandard
NTC ThermistorNo
Operating Temperature-40°C ~ 125°C
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageModule

FF200R12KT3EHOSA1 - Tags

FF200R12KT3EHOSA1 FF200R12KT3EHOSA1 PDF FF200R12KT3EHOSA1 datasheet FF200R12KT3EHOSA1 specification FF200R12KT3EHOSA1 image FF200R12KT3EHOSA1 India Renesas Electronics India FF200R12KT3EHOSA1 buy FF200R12KT3EHOSA1 FF200R12KT3EHOSA1 price FF200R12KT3EHOSA1 distributor FF200R12KT3EHOSA1 supplier FF200R12KT3EHOSA1 wholesales