FF200R12KS4PHOSA1


FF200R12KS4PHOSA1

Part NumberFF200R12KS4PHOSA1

Manufacturer

Description

Package / CaseModule

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

FF200R12KS4PHOSA1 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - IGBTs - Modules
Standard Package8
ManufacturerInfineon Technologies
Series-
Part StatusActive
IGBT Type-
ConfigurationHalf Bridge
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)275A
Power - Max1400W
Vce(on) (Max) @ Vge, Ic3.7V @ 15V, 200A
Current - Collector Cutoff (Max)5mA
Input Capacitance (Cies) @ Vce13nF @ 25V
InputStandard
NTC ThermistorNo
Operating Temperature-40°C ~ 125°C
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageModule

FF200R12KS4PHOSA1 - Tags

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