Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ FDT86113LZ

FDT86113LZ

FDT86113LZ

Part NumberFDT86113LZ

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 100V 3.3A SOT223

DatasheetFDT86113LZ

Package / CaseTO-261-4, TO-261AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 3.3A (Tc) 2.2W (Ta) Surface Mount SOT-223-4

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FDT86113LZ - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	FDT86113LZ
Standard Package	1
Manufacturer	ON Semiconductor
Series	PowerTrench®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	3.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	100mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	6.8nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	315pF @ 50V
FET Feature	-
Power Dissipation (Max)	2.2W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-223-4
Package / Case	TO-261-4, TO-261AA

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