FDT86113LZ
FDT86113LZ
Part Number FDT86113LZ Description MOSFET N-CH 100V 3.3A SOT223 Package / Case TO-261-4, TO-261AAUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 100V 3.3A (Tc) 2.2W (Ta) Surface Mount SOT-223-4
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FDT86113LZ - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FDT86113LZ Standard Package 1 Manufacturer ON Semiconductor Series PowerTrench® Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 3.3A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 100mOhm @ 3.3A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 6.8nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 315pF @ 50V FET Feature - Power Dissipation (Max) 2.2W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-223-4 Package / Case TO-261-4, TO-261AA
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