FDP8896
FDP8896
Part Number FDP8896 Description MOSFET N-CH 30V 92A TO-220AB Package / Case TO-220-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 30V 16A (Ta), 92A (Tc) 80W (Tc) Through Hole TO-220-3
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FDP8896 - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FDP8896 Standard Package 800 Manufacturer ON Semiconductor Series PowerTrench® Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 16A (Ta), 92A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 5.9mOhm @ 35A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 67nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2525pF @ 15V FET Feature - Power Dissipation (Max) 80W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3 Package / Case TO-220-3
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SI7414DN-T1-E3 Vishay Siliconix, N-Channel 60V 5.6A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8, TrenchFET®
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IPW90R120C3FKSA1 Infineon Technologies, N-Channel 900V 36A (Tc) 417W (Tc) Through Hole PG-TO247-3, CoolMOS™
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DMN2990UFA-7B Diodes Incorporated, N-Channel 20V 510mA (Ta) 400mW (Ta) Surface Mount 3-X2-DFN0806,
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AO7400 Alpha & Omega Semiconductor Inc., N-Channel 30V 1.7A (Ta) 350mW (Ta) Surface Mount SC-70-3,
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IPB80N06S2H5ATMA2 Infineon Technologies, N-Channel 55V 80A (Tc) 300W (Tc) Surface Mount PG-TO263-3-2, OptiMOS™
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IXTP1R6N50D2 IXYS, N-Channel 500V 1.6A (Tc) 100W (Tc) Through Hole TO-220AB,
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NTP6412ANG ON Semiconductor, N-Channel 100V 58A (Tc) 167W (Tc) Through Hole TO-220AB,
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FDB0190N807L ON Semiconductor, N-Channel 80V 270A (Tc) 3.8W (Ta), 250W (Tc) Surface Mount TO-263-7, PowerTrench®
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