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FDP65N06

FDP65N06

Part NumberFDP65N06

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 60V 65A TO-220

DatasheetFDP65N06

Package / CaseTO-220-3

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Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 60V 65A (Tc) 135W (Tc) Through Hole TO-220-3

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FDP65N06 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	FDP65N06
Standard Package	1000
Manufacturer	ON Semiconductor
Series	UniFET™
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	65A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	16mOhm @ 32.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	43nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2170pF @ 25V
FET Feature	-
Power Dissipation (Max)	135W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220-3
Package / Case	TO-220-3

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