FDP52N20
FDP52N20
Part Number FDP52N20
Description MOSFET N-CH 200V 52A TO-220
Package / Case TO-220-3
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Lead Time To be Confirmed
Detailed Description N-Channel 200V 52A (Tc) 357W (Tc) Through Hole TO-220-3
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FDP52N20 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FDP52N20, FDPF52N20T
Standard Package 1000
Manufacturer ON Semiconductor
Series UniFET™
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 52A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 49mOhm @ 26A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 63nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2900pF @ 25V
FET Feature -
Power Dissipation (Max) 357W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
2N7002A-7
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Infineon Technologies, N-Channel 60V 120A (Tc) 188W (Tc) Through Hole PG-TO220-3, OptiMOS™
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FDP52N20 - Tags