FDP2670

Part NumberFDP2670

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 200V 19A TO-220AB

DatasheetFDB2670, FDP2670

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 200V 19A (Ta) 93W (Tc) Through Hole TO-220-3

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FDP2670 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

FDB2670, FDP2670

Standard Package

400

Manufacturer

ON Semiconductor

Series

PowerTrench®

Packaging

Tube

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

19A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

130mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

38nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1320pF @ 100V

FET Feature

Power Dissipation (Max)

93W (Tc)

Operating Temperature

-65°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case