FDMS3572
FDMS3572
Part Number FDMS3572 Description MOSFET N-CH 80V 8.8A POWER56 Package / Case 8-PowerWDFNUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 80V 8.8A (Ta), 22A (Tc) 2.5W (Ta), 78W (Tc) Surface Mount 8-MLP (5x6), Power56
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FDMS3572 - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FDMS3572 Standard Package 3000 Manufacturer ON Semiconductor Series UltraFET™ Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 8.8A (Ta), 22A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 16.5mOhm @ 8.8A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2490pF @ 40V FET Feature - Power Dissipation (Max) 2.5W (Ta), 78W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-MLP (5x6), Power56 Package / Case 8-PowerWDFN
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TSM80N1R2CI C0G Taiwan Semiconductor Corporation, N-Channel 800V 5.5A (Tc) 25W (Tc) Through Hole ITO-220AB,
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CSD18513Q5A Texas Instruments, N-Channel 40V 124A (Tc) 96W (Tc) Surface Mount 8-VSONP (5x6), NexFET™
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IXFH14N85X IXYS, N-Channel 850V 14A (Tc) 460W (Tc) Through Hole TO-247-3, HiPerFET™
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SI7846DP-T1-E3 Vishay Siliconix, N-Channel 150V 4A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®
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