FDG312P
FDG312P
Part Number FDG312P
Description MOSFET P-CH 20V 1.2A SC70-6
Package / Case 6-TSSOP, SC-88, SOT-363
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Lead Time To be Confirmed
Detailed Description P-Channel 20V 1.2A (Ta) 750mW (Ta) Surface Mount SC-88 (SC-70-6)
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FDG312P - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FDG312P
Standard Package 3000
Manufacturer ON Semiconductor
Series PowerTrench®
Packaging Tape & Reel (TR)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 1.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 180mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5nC @ 4.5V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 330pF @ 10V
FET Feature -
Power Dissipation (Max) 750mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SC-88 (SC-70-6)
Package / Case 6-TSSOP, SC-88, SOT-363
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