FDD86102
FDD86102
Part Number FDD86102
Description MOSFET N-CH 100V 8A DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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Detailed Description N-Channel 100V 8A (Ta), 36A (Tc) 3.1W (Ta), 62W (Tc) Surface Mount D-PAK (TO-252)
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FDD86102 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FDD86102
Standard Package 1
Manufacturer ON Semiconductor
Series PowerTrench®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 8A (Ta), 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 24mOhm @ 8A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1035pF @ 50V
FET Feature -
Power Dissipation (Max) 3.1W (Ta), 62W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-PAK (TO-252)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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FDD86102 - Tags