FDD3510H

Part NumberFDD3510H

ManufacturerON Semiconductor

DescriptionMOSFET N/P-CH 80V 4.3A/2.8A DPAK

DatasheetFDD3510H

Package / CaseTO-252-5, DPak (4 Leads + Tab), TO-252AD

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionMosfet Array N and P-Channel, Common Drain 80V 4.3A, 2.8A 1.3W Surface Mount TO-252-4L

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FDD3510H - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays

Datasheet

FDD3510H

Standard Package

Manufacturer

ON Semiconductor

Series

PowerTrench®

Packaging

Cut Tape (CT)

Part Status

Active

FET Type

N and P-Channel, Common Drain

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

4.3A, 2.8A

Rds On (Max) @ Id, Vgs

80mOhm @ 4.3A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

18nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

800pF @ 40V

Power - Max

1.3W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-252-5, DPak (4 Leads + Tab), TO-252AD

Supplier Device Package

TO-252-4L

All categories

FDD3510H

Part NumberFDD3510H

ManufacturerON Semiconductor

DescriptionMOSFET N/P-CH 80V 4.3A/2.8A DPAK

DatasheetFDD3510H

Package / CaseTO-252-5, DPak (4 Leads + Tab), TO-252AD

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionMosfet Array N and P-Channel, Common Drain 80V 4.3A, 2.8A 1.3W Surface Mount TO-252-4L

FDD3510H - Product Attributes

FDD3510H - Tags