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FDC855N

FDC855N

Part NumberFDC855N

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 30V 6.1A 6-SSOT

DatasheetFDC855N

Package / CaseSOT-23-6 Thin, TSOT-23-6

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 6.1A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6

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FDC855N - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	FDC855N
Standard Package	1
Manufacturer	ON Semiconductor
Series	PowerTrench®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	6.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	27mOhm @ 6.1A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	13nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	655pF @ 15V
FET Feature	-
Power Dissipation (Max)	1.6W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SuperSOT™-6
Package / Case	SOT-23-6 Thin, TSOT-23-6

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