FDB8896
FDB8896
Part Number FDB8896 Description MOSFET N-CH 30V 93A TO-263AB Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263ABUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 30V 19A (Ta), 93A (Tc) 80W (Tc) Surface Mount TO-263AB
To learn about the specification of FDB8896, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add FDB8896 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of FDB8896.
We are offering FDB8896 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
FDB8896 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FDB8896 Standard Package 800 Manufacturer ON Semiconductor Series PowerTrench® Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 19A (Ta), 93A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 5.7mOhm @ 35A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 67nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2525pF @ 15V FET Feature - Power Dissipation (Max) 80W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263AB Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
BSZ900N15NS3GATMA1 Infineon Technologies, N-Channel 150V 13A (Tc) 38W (Tc) Surface Mount PG-TSDSON-8, OptiMOS™
View
STD1NK80Z-1 STMicroelectronics, N-Channel 800V 1A (Tc) 45W (Tc) Through Hole I-PAK, SuperMESH™
View
IXFT120N25X3HV IXYS, N-Channel 250V 120A (Tc) 520W (Tc) Surface Mount TO-268HV, HiPerFET™
View
BUK72150-55A,118 Nexperia USA Inc., N-Channel 55V 11A (Tc) 36W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, TrenchMOS™
View
FDB8860 ON Semiconductor, N-Channel 30V 80A (Tc) 254W (Tc) Surface Mount TO-263AB, PowerTrench®
View
SUP70060E-GE3 Vishay Siliconix, N-Channel 100V 131A (Tc) 200W (Tc) Through Hole TO-220AB, ThunderFET®
View
TN2510N8-G Microchip Technology, N-Channel 100V 730mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89),
View
STB60NF10T4 STMicroelectronics, N-Channel 100V 60A (Tc) 300W (Tc) Surface Mount D2PAK, STripFET™ II
View
DMN62D0UW-7 Diodes Incorporated, N-Channel 60V 340mA (Ta) 320mW (Ta) Surface Mount SOT-323,
View
SI5424DC-T1-GE3 Vishay Siliconix, N-Channel 30V 6A (Tc) 2.5W (Ta), 6.25W (Tc) Surface Mount 1206-8 ChipFET™, TrenchFET®
View
RD3S075CNTL1 Rohm Semiconductor, N-Channel 190V 7.5A (Tc) 52W (Tc) Surface Mount TO-252,
View
TK12A50E,S5X Toshiba Semiconductor and Storage, N-Channel 500V 12A (Ta) 45W (Tc) Through Hole TO-220SIS,
View
FDB8896 - Tags
English
