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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FDB3632-F085
Standard Package 1
Manufacturer ON Semiconductor
Series Automotive, AEC-Q101, PowerTrench®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 9mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6000pF @ 25V
FET Feature -
Power Dissipation (Max) 310W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263AB
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PSMN4R3-30PL,127
Nexperia USA Inc., N-Channel 30V 100A (Tc) 103W (Tc) Through Hole TO-220AB,
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IXFP16N50P
IXYS, N-Channel 500V 16A (Tc) 300W (Tc) Through Hole TO-220AB, HiPerFET™, PolarHT™
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SIHA100N60E-GE3
Vishay Siliconix, N-Channel 600V 30A (Tc) 35W (Tc) Through Hole TO-220 Full Pack,
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SIR438DP-T1-GE3
Vishay Siliconix, N-Channel 25V 60A (Tc) 5.4W (Ta), 83W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
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SIRA12DP-T1-GE3
Vishay Siliconix, N-Channel 30V 25A (Tc) 4.5W (Ta), 31W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
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BSP324H6327XTSA1
Infineon Technologies, N-Channel 400V 170mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4, SIPMOS®
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STD4LN80K5
STMicroelectronics, N-Channel 800V 3A (Tc) 60W (Tc) Surface Mount DPAK, MDmesh™ K5
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STW18N65M5
STMicroelectronics, N-Channel 650V 15A (Tc) 110W (Tc) Through Hole TO-247, MDmesh™ V
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SI3456DDV-T1-GE3
Vishay Siliconix, N-Channel 30V 6.3A (Tc) 1.7W (Ta), 2.7W (Tc) Surface Mount 6-TSOP, TrenchFET®
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TN5325N8-G
Microchip Technology, N-Channel 250V 316mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89),
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TN2504N8-G
Microchip Technology, N-Channel 40V 890mA (Tj) 1.6W (Tc) Surface Mount TO-243AA (SOT-89),
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IRFS3107TRL7PP
Infineon Technologies, N-Channel 75V 240A (Tc) 370W (Tc) Surface Mount D2PAK (7-Lead), HEXFET®
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