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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FDB14AN06LA0-F085
Standard Package 1
Manufacturer ON Semiconductor
Series Automotive, AEC-Q101, PowerTrench®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 67A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 11.6mOhm @ 67A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 31nC @ 5V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2900pF @ 25V
FET Feature -
Power Dissipation (Max) 125W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263AB
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FQB50N06TM
ON Semiconductor, N-Channel 60V 50A (Tc) 3.75W (Ta), 120W (Tc) Surface Mount D²PAK (TO-263AB), QFET®
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RS1E240BNTB
Rohm Semiconductor, N-Channel 30V 24A (Ta) 3W (Ta), 30W (Tc) Surface Mount 8-HSOP,
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IRFR120TRPBF
Vishay Siliconix, N-Channel 100V 7.7A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak,
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IRLR3105TRPBF
Infineon Technologies, N-Channel 55V 25A (Tc) 57W (Tc) Surface Mount D-Pak, HEXFET®
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TPH7R204PL,LQ
Toshiba Semiconductor and Storage, N-Channel 40V 48A (Tc) 69W (Tc) Surface Mount 8-SOP Advance (5x5), U-MOSIX-H
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DMT10H015LSS-13
Diodes Incorporated, N-Channel 100V 8.3A (Ta) 1.2W (Ta) Surface Mount 8-SO,
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TK5A60W,S4VX
Toshiba Semiconductor and Storage, N-Channel 600V 5.4A (Ta) 30W (Tc) Through Hole TO-220SIS, DTMOSIV
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FDB33N25TM
ON Semiconductor, N-Channel 250V 33A (Tc) 235W (Tc) Surface Mount D²PAK, UniFET™
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FDB13AN06A0
ON Semiconductor, N-Channel 60V 10.9A (Ta), 62A (Tc) 115W (Tc) Surface Mount D²PAK, PowerTrench®
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FDI030N06
ON Semiconductor, N-Channel 60V 120A (Tc) 231W (Tc) Through Hole I2PAK (TO-262), PowerTrench®
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IRFU110PBF
Vishay Siliconix, N-Channel 100V 4.3A (Tc) 25W (Tc) Through Hole TO-251AA,
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PSMN013-100BS,118
Nexperia USA Inc., N-Channel 100V 68A (Tc) 170W (Tc) Surface Mount D2PAK,
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