FDB12N50TM
FDB12N50TM
Part Number FDB12N50TM
Description MOSFET N-CH 500V 11.5A D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Lead Time To be Confirmed
Detailed Description N-Channel 500V 11.5A (Tc) 165W (Tc) Surface Mount D²PAK
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FDB12N50TM - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FDB12N50TM
Standard Package 1
Manufacturer ON Semiconductor
Series UniFET™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500V
Current - Continuous Drain (Id) @ 25°C 11.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 650mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1315pF @ 25V
FET Feature -
Power Dissipation (Max) 165W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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