FDB12N50FTM-WS

Part NumberFDB12N50FTM-WS

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	FDB12N50F
Standard Package	1
Manufacturer	ON Semiconductor
Series	UniFET™
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25°C	11.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	700mOhm @ 6A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	30nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1395pF @ 25V
FET Feature	-
Power Dissipation (Max)	165W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D²PAK
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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