FCPF190N65FL1
FCPF190N65FL1
Part Number FCPF190N65FL1 Description MOSFET N-CH 650V 20.6A TO220 Package / Case TO-220-3 Full PackUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 650V 20.6A (Tc) 39W (Tc) Through Hole TO-220F
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FCPF190N65FL1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FCPF190N65FL1 Standard Package 1000 Manufacturer ON Semiconductor Series SuperFET® II Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 20.6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 190mOhm @ 10A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 78nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3055pF @ 100V FET Feature - Power Dissipation (Max) 39W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220F Package / Case TO-220-3 Full Pack
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