Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ FCD9N60NTM

FCD9N60NTM

FCD9N60NTM

Part NumberFCD9N60NTM

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 600V 9A DPAK

DatasheetFCD9N60NTM

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 9A (Tc) 92.6W (Tc) Surface Mount D-Pak

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FCD9N60NTM - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	FCD9N60NTM
Standard Package	1
Manufacturer	ON Semiconductor
Series	SupreMOS™
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	385mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	17.8nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1000pF @ 100V
FET Feature	-
Power Dissipation (Max)	92.6W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D-Pak
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number	FCD9N60

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