F475R12KS4B11BOSA1


F475R12KS4B11BOSA1

Part NumberF475R12KS4B11BOSA1

Manufacturer

Description

Datasheet

Package / CaseModule

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

F475R12KS4B11BOSA1 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - IGBTs - Modules
Datasheet
Standard Package10
ManufacturerInfineon Technologies
Series-
Part StatusActive
IGBT Type-
ConfigurationThree Phase Inverter
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)100A
Power - Max500W
Vce(on) (Max) @ Vge, Ic3.75V @ 15V, 75A
Current - Collector Cutoff (Max)1mA
Input Capacitance (Cies) @ Vce5.1nF @ 25V
InputStandard
NTC ThermistorYes
Operating Temperature-40°C ~ 125°C
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageModule

F475R12KS4B11BOSA1 - Tags

F475R12KS4B11BOSA1 F475R12KS4B11BOSA1 PDF F475R12KS4B11BOSA1 datasheet F475R12KS4B11BOSA1 specification F475R12KS4B11BOSA1 image F475R12KS4B11BOSA1 India Renesas Electronics India F475R12KS4B11BOSA1 buy F475R12KS4B11BOSA1 F475R12KS4B11BOSA1 price F475R12KS4B11BOSA1 distributor F475R12KS4B11BOSA1 supplier F475R12KS4B11BOSA1 wholesales