ESM2012DV

Part NumberESM2012DV

ManufacturerSTMicroelectronics

DescriptionTRANS NPN DARL 120V 120A ISOTOP

DatasheetESM2012DV

Package / CaseISOTOP

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionBipolar (BJT) Transistor NPN - Darlington 120V 120A 175W Chassis Mount ISOTOP®

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ESM2012DV - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single

Datasheet

ESM2012DV

Standard Package

Manufacturer

STMicroelectronics

Series

Packaging

Tube

Part Status

Obsolete

Transistor Type

NPN - Darlington

Current - Collector (Ic) (Max)

120A

Voltage - Collector Emitter Breakdown (Max)

120V

Vce Saturation (Max) @ Ib, Ic

1.5V @ 1A, 100A

Current - Collector Cutoff (Max)

DC Current Gain (hFE) (Min) @ Ic, Vce

1200 @ 100A, 5V

Power - Max

175W

Frequency - Transition

Operating Temperature

150°C (TJ)

Mounting Type

Chassis Mount

Package / Case

ISOTOP

Supplier Device Package

ISOTOP®

All categories

ESM2012DV

Part NumberESM2012DV

ManufacturerSTMicroelectronics

DescriptionTRANS NPN DARL 120V 120A ISOTOP

DatasheetESM2012DV

Package / CaseISOTOP

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionBipolar (BJT) Transistor NPN - Darlington 120V 120A 175W Chassis Mount ISOTOP®

ESM2012DV - Product Attributes

ESM2012DV - Tags