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ES6U1T2R


ES6U1T2R

Part NumberES6U1T2R

Manufacturer

Description

Datasheet

Package / CaseSOT-563, SOT-666

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

ES6U1T2R - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package8000
ManufacturerRohm Semiconductor
Series-
PackagingTape & Reel (TR)
Part StatusNot For New Designs
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C1.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Rds On (Max) @ Id, Vgs260mOhm @ 1.3A, 4.5V
Vgs(th) (Max) @ Id1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs2.4nC @ 4.5V
Vgs (Max)±10V
Input Capacitance (Ciss) (Max) @ Vds290pF @ 6V
FET FeatureSchottky Diode (Isolated)
Power Dissipation (Max)700mW (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-WEMT
Package / CaseSOT-563, SOT-666

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ES6U1T2R - Tags

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