EPC2110ENGRT

Part NumberEPC2110ENGRT

ManufacturerEPC

DescriptionGAN TRANS 2N-CH 120V BUMPED DIE

DatasheetEPC2110 Datasheet

Package / CaseDie

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionMosfet Array 2 N-Channel (Dual) Common Source 120V 3.4A Surface Mount Die

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EPC2110ENGRT - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays

Datasheet

EPC2110 Datasheet

Standard Package

2500

Manufacturer

EPC

Series

eGaN®

Packaging

Tape & Reel (TR)

Part Status

Active

FET Type

2 N-Channel (Dual) Common Source

FET Feature

GaNFET (Gallium Nitride)

Drain to Source Voltage (Vdss)

120V

Current - Continuous Drain (Id) @ 25°C

3.4A

Rds On (Max) @ Id, Vgs

60mOhm @ 4A, 5V

Vgs(th) (Max) @ Id

2.5V @ 700µA

Gate Charge (Qg) (Max) @ Vgs

0.8nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds

80pF @ 60V

Power - Max

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

Die

Supplier Device Package

Die

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