EPC2107ENGRT

Part NumberEPC2107ENGRT

ManufacturerEPC

DescriptionGAN TRANS 3N-CH 100V BUMPED DIE

DatasheetEPC2107 Datasheet

Package / Case9-VFBGA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionMosfet Array 3 N-Channel (Half Bridge + Synchronous Bootstrap) 100V 1.7A, 500mA Surface Mount 9-BGA (1.35x1.35)

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EPC2107ENGRT - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays

Datasheet

EPC2107 Datasheet

Standard Package

Manufacturer

EPC

Series

eGaN®

Packaging

Cut Tape (CT)

Part Status

Discontinued at Digi-Key

FET Type

3 N-Channel (Half Bridge + Synchronous Bootstrap)

FET Feature

GaNFET (Gallium Nitride)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

1.7A, 500mA

Rds On (Max) @ Id, Vgs

320mOhm @ 2A, 5V, 3.3Ohm @ 2A, 5V

Vgs(th) (Max) @ Id

2.5V @ 100µA, 2.5V @ 20µA

Gate Charge (Qg) (Max) @ Vgs

0.16nC @ 5V, 0.044nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds

16pF @ 50V, 7pF @ 50V

Power - Max

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

9-VFBGA

Supplier Device Package

9-BGA (1.35x1.35)

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