EPC2101

Part NumberEPC2101

ManufacturerEPC

DescriptionGAN TRANS ASYMMETRICAL HALF BRID

DatasheetEPC2101 Preliminary Datasheet

Package / CaseDie

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionMosfet Array 2 N-Channel (Half Bridge) 60V 9.5A, 38A Surface Mount Die

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EPC2101 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet	EPC2101 Preliminary Datasheet
Standard Package	1
Manufacturer	EPC
Series	eGaN®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	2 N-Channel (Half Bridge)
FET Feature	GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	9.5A, 38A
Rds On (Max) @ Id, Vgs	11.5mOhm @ 20A, 5V, 2.7mOhm @ 20A, 5V
Vgs(th) (Max) @ Id	2.5V @ 3mA, 2.5V @ 12mA
Gate Charge (Qg) (Max) @ Vgs	2.7nC @ 5V, 12nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds	300pF @ 30V, 1200pF @ 30V
Power - Max	-
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	Die
Supplier Device Package	Die

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