EPC2016C
EPC2016C
Part Number EPC2016C Manufacturer EPC Description GANFET TRANS 100V 18A BUMPED DIE Package / Case DieUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 100V 18A (Ta) Surface Mount Die
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EPC2016C - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet EPC2016C Datasheet Standard Package 1 Manufacturer EPC Series eGaN® Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 18A (Ta) Drive Voltage (Max Rds On, Min Rds On) 5V Rds On (Max) @ Id, Vgs 16mOhm @ 11A, 5V Vgs(th) (Max) @ Id 2.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs 4.5nC @ 5V Vgs (Max) +6V, -4V Input Capacitance (Ciss) (Max) @ Vds 420pF @ 50V FET Feature - Power Dissipation (Max) - Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package Die Package / Case Die
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EPC2016C - Tags
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