EPC2012

Part NumberEPC2012

ManufacturerEPC

DescriptionGANFET TRANS 200V 3A BUMPED DIE

DatasheetEPC2012

Package / CaseDie

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 200V 3A (Ta) Surface Mount Die

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EPC2012 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

EPC2012

Standard Package

Manufacturer

EPC

Series

eGaN®

Packaging

Cut Tape (CT)

Part Status

Discontinued at Digi-Key

FET Type

N-Channel

Technology

GaNFET (Gallium Nitride)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

Rds On (Max) @ Id, Vgs

100mOhm @ 3A, 5V

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

1.8nC @ 5V

Vgs (Max)

+6V, -5V

Input Capacitance (Ciss) (Max) @ Vds

145pF @ 100V

FET Feature

Power Dissipation (Max)

Operating Temperature

-40°C ~ 125°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

Die

Package / Case

Die

All categories

EPC2012

Part NumberEPC2012

ManufacturerEPC

DescriptionGANFET TRANS 200V 3A BUMPED DIE

DatasheetEPC2012

Package / CaseDie

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 200V 3A (Ta) Surface Mount Die

EPC2012 - Product Attributes

EPC2012 - Tags