EMF8T2R

Part NumberEMF8T2R

ManufacturerRohm Semiconductor

DescriptionTRANS NPN PREBIAS/NPN 0.15W EMT6

DatasheetEMF8

Package / CaseSOT-563, SOT-666

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionPre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 NPN 50V, 12V 100mA, 500mA 250MHz, 320MHz 150mW Surface Mount EMT6

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EMF8T2R - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Datasheet

EMF8

Standard Package

8000

Manufacturer

Rohm Semiconductor

Series

Packaging

Tape & Reel (TR)

Part Status

Not For New Designs

Transistor Type

1 NPN Pre-Biased, 1 NPN

Current - Collector (Ic) (Max)

100mA, 500mA

Voltage - Collector Emitter Breakdown (Max)

50V, 12V

Resistor - Base (R1)

47kOhms

Resistor - Emitter Base (R2)

47kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

68 @ 5mA, 5V / 270 @ 10mA, 2V

Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

250MHz, 320MHz

Power - Max

150mW

Mounting Type

Surface Mount

Package / Case

SOT-563, SOT-666

Supplier Device Package

EMT6

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