EMF22T2R

Part NumberEMF22T2R

ManufacturerRohm Semiconductor

DescriptionTRANS NPN PREBIAS/NPN 0.15W EMT6

DatasheetEMF22, UMF22N

Package / CaseSOT-563, SOT-666

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionPre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 NPN 50V, 12V 100mA, 500mA 250MHz, 320MHz 150mW Surface Mount EMT6

To learn about the specification of EMF22T2R, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add EMF22T2R with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of EMF22T2R.
We are offering EMF22T2R for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

EMF22T2R - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Datasheet

EMF22, UMF22N

Standard Package

8000

Manufacturer

Rohm Semiconductor

Series

Packaging

Tape & Reel (TR)

Part Status

Obsolete

Transistor Type

1 NPN Pre-Biased, 1 NPN

Current - Collector (Ic) (Max)

100mA, 500mA

Voltage - Collector Emitter Breakdown (Max)

50V, 12V

Resistor - Base (R1)

10kOhms

Resistor - Emitter Base (R2)

10kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

30 @ 5mA, 5V / 270 @ 10mA, 2V

Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

250MHz, 320MHz

Power - Max

150mW

Mounting Type

Surface Mount

Package / Case

SOT-563, SOT-666

Supplier Device Package

EMT6

All categories