EMF17T2R


EMF17T2R

Part NumberEMF17T2R

Manufacturer

Description

Datasheet

Package / CaseSOT-563, SOT-666

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

EMF17T2R - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Datasheet
Standard Package8000
ManufacturerRohm Semiconductor
Series-
PackagingTape & Reel (TR)
Part StatusNot For New Designs
Transistor Type1 NPN Pre-Biased, 1 PNP
Current - Collector (Ic) (Max)100mA, 150mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)2.2kOhms
Resistor - Emitter Base (R2)2.2kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 20mA, 5V / 180 @ 1mA, 6V
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 10mA / 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition250MHz, 140MHz
Power - Max150mW
Mounting TypeSurface Mount
Package / CaseSOT-563, SOT-666
Supplier Device PackageEMT6

EMF17T2R - Tags

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