EMD30T2R


EMD30T2R

Part NumberEMD30T2R

Manufacturer

Description

Datasheet

Package / CaseSOT-563, SOT-666

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

EMD30T2R - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Datasheet
Standard Package1
ManufacturerRohm Semiconductor
Series-
PackagingCut Tape (CT)
Part StatusNot For New Designs
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA, 200mA
Voltage - Collector Emitter Breakdown (Max)50V, 30V
Resistor - Base (R1)10kOhms, 1kOhms
Resistor - Emitter Base (R2)10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 5mA, 5V / 140 @ 100mA, 2V
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 10mA / 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition250MHz, 260MHz
Power - Max150mW
Mounting TypeSurface Mount
Package / CaseSOT-563, SOT-666
Supplier Device PackageEMT6
Base Part Number*MD30

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