EMB10T2R


EMB10T2R

Part NumberEMB10T2R

Manufacturer

Description

Datasheet

Package / CaseSOT-563, SOT-666

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

EMB10T2R - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Datasheet
Standard Package8000
ManufacturerRohm Semiconductor
Series-
PackagingTape & Reel (TR)
Part StatusActive
Transistor Type2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)2.2kOhms
Resistor - Emitter Base (R2)47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition250MHz
Power - Max150mW
Mounting TypeSurface Mount
Package / CaseSOT-563, SOT-666
Supplier Device PackageEMT6
Base Part NumberMB10

EMB10T2R - Tags

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